MagnaChip to Offer Next Generation 0.35um High Voltage BCD Process Technology
(Logo: http://photos.prnewswire.com/prnh/20120305/NY61184LOGO)
This second generation 0.35-micron BCD process features high-voltage MOSFETs with 20~35% lower specific on resistance (Rsp) than the previous generation, achieved through process and device structure optimization. IC designs typically require a broad range of voltage schemes and reliability requirements. This new BCD process features an option to select DMOS devices which best optimize Rsp values for scaled reliability levels.
Besides featuring a lower Rsp, MagnaChip's proprietary deep-trench isolation technology yields about a five times smaller DMOS isolation area and much improved latch-up immunity, compared to conventional junction isolation approaches. With the combination of lower Rsp, improved isolation and higher reliability, this next generation 0.35-micron BCD process will provide our foundry customers with smaller and higher performance products
This new BCD process technology supports MagnaChip's various process module options which enhance design flexibility and cost effectiveness. These options include multi-time programmable (MTP) and high-reliability non-volatile memory cells, one-time programmable (OTP) cells, high capacitance per unit area, metal-insulator-metal capacitor, copper wire bonding, thick top metal, and redistribution layer process options.
"We are very pleased to offer our next generation 0.35um BCD high voltage process solution optimized for the fast growing mobile and consumer markets," said
About
Headquartered in
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MagnaChip Contacts: |
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In the United States: |
In Korea: |
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Robert Pursel |
Chankeum Park |
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Director of Investor Relations |
Senior Manager, Public Relations |
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Tel. +1-408-625-1262 |
Tel. +82-2-6903-3195 |
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