MagnaChip to Offer Silicon on Insulator RF CMOS Technology
The SOI RF CMOS process technology is optimized for use in antenna switching and tuner applications. Switches and tuners are core components of wireless FEMs for cellular and Wi-Fi connectivity. CMOS based FEMs reduce manufacturing cost and time to market while providing competitive performance for multiband and multimode smartphones and tablets.
MagnaChip's 0.18um SOI RF CMOS technology uses thin-film silicon SOI on trap-rich high resistivity substrates for better performance than the standard SOI substrate. This technology also features a 2.5V switch FET delivering a highly competitive figure of merit of Ron*Coff/BVDSS of less than 60fs/V. This is the value range of competitive technology currently in production and is well suited for FEM applications. In addition, this technology includes 2.5V CMOS, native NMOS, 1.6Kohm/square poly resistors, 2.2fF/um2 MIM capacitors, 4LM and 4 micron thick top metal enabling a high level of integration. Also, the number of mask layers is about 30% less than that required of other comparable technologies, to provide MagnaChip customers with a cost-effective solution without compromising performance.
MagnaChip has partnered with EEsof EDA at
"The cost-effective and high-performance nature of our 0.18um SOI RF CMOS technology offering is an important addition to MagnaChip's growing portfolio of advanced and high-performance process technologies for foundry customers," said
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Keysight Technologies is a global electronic measurement technology and market leader helping to transform its customers' measurement experience through innovations in wireless, modular and software solutions.
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In the United States: Robert Pursel Director of Investor Relations Tel. +1-408-625-1262 |
In Korea: Chankeun Park Senior Manager, Public Relations Tel. +82-2-6903-3195 To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/magnachip-to-offer-silicon-on-insulator-rf-cmos-technology-300002174.html |
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