MagnaChip to Offer 0.35um Ultra-High Voltage BCD Process Technology for Integrated Smart Energy Applications
(Logo: http://photos.prnewswire.com/prnh/20120305/NY61184LOGO )
The ultra-high voltage 700V BCD technology enhances performance by significantly lowering conduction and switching losses. This feature is accomplished by combining dual gate CMOS (3.3/5.5V) integration technology with two medium voltage (20/40V) LDMOS and ultra-high voltage (700V) applications in a single process. The new ultra-high voltage (700V) process will include JFET and depletion mode LDMOS for start-up and low on resistance LDMOS for power devices.
This new process enables foundry customers to design a cost competitive and highly reliable one-chip solution that integrates a DC-DC controller and a start-up function together with high density CMOS. The ultra-high voltage LDMOS sustains a breakdown voltage up to 800V while maintaining a low specific on resistance. It also provides customers with design flexibility by allowing the selection of either a JFET or depletion-mode LDMOS start-up device depending on cut-off voltage and current handling requirements.
This new BCD 700V technology also supports MagnaChip's various process module options such as 20V parasitic NPN/PNP BJT, high resistance poly, Zener diodes, poly fuse, and high voltage ESD protection. This new high-voltage process is scheduled to be available by
"We are very pleased to offer our ultra-high voltage 700V BCD technology to meet the growing global demand for smart energy products. Our new 700V BCD process will provide foundry customers with increased design flexibility and integration to address the broad spectrum of design complexity and end market requirements," said
About
Headquartered in
|
CONTACTS: |
|
|
In the United States: Robert Pursel Director of Investor Relations Tel. +1-408-625-1262 |
In Korea: Chankeun Park Senior Manager, Public Relations Tel. +82-3-6903-3195 |
SOURCE